Investigation of the Structural, Optical, and Electrical Properties of ZnO/4-Amino-2-Methylquinoline p-n Heterojunction by Spin-Coating Method

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dc.authoridDemir, Ramazan/0000-0003-4130-4927
dc.contributor.authorDemir, Ramazan
dc.date.accessioned2025-01-27T20:56:25Z
dc.date.available2025-01-27T20:56:25Z
dc.date.issued2024
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractA p-n heterojunction diode is fabricated using a p-type 4-amino-2-methylquinoline (C10H10N2) on an n-type ZnO film and its structural, optical, and electrical properties are investigated. First, a ZnO thin film is prepared on an ITO substrate by spin coating. Subsequently, this ZnO film is coated with a C10H10N2 film using the same method. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-vis spectroscopy, and current-voltage measurements are carried out on the prepared films. According to the XRD result, sharp peaks at 320.081, 340.488, and 360.548 are observed in the hexagonal phase of ZnO. At these angles, grain sizes of 15.308, 15.179, and 13.715 nm are calculated. The absorption peaks of electronic transitions pi ->pi*, n ->pi*, and d -> d* in the ZnO/C10H10N2 heterojunction film are observed. From the IV diagram, it can be seen that the heterojunction structure has a diode characteristic. From the IV data, the rectification factor is calculated to be 6.59 and its graph is drawn. With the Cheung method, ideality factor (n) = 2.87, series resistance (R-S) = 1 M Omega, and shunt resistance (R-Sh) = 5 k Omega are found.
dc.description.sponsorshipCanakkale Onsekiz Mart University Scientific Research Projects [FBA-2018-2487]
dc.description.sponsorshipThis study was supported by Canakkale Onsekiz Mart University Scientific Research Projects Coordination Unit with project number FBA-2018-2487.
dc.identifier.doi10.1002/pssa.202400507
dc.identifier.issn1862-6300
dc.identifier.issn1862-6319
dc.identifier.scopus2-s2.0-85201572874
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1002/pssa.202400507
dc.identifier.urihttps://hdl.handle.net/20.500.12428/26399
dc.identifier.wosWOS:001294668200001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWiley-V C H Verlag Gmbh
dc.relation.ispartofPhysica Status Solidi A-Applications and Materials Science
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subject4-amino-2-methylquinoline
dc.subjectC10H10N2
dc.subjectp-n heterojunction diodes
dc.subjectthin films
dc.subjectZnO
dc.titleInvestigation of the Structural, Optical, and Electrical Properties of ZnO/4-Amino-2-Methylquinoline p-n Heterojunction by Spin-Coating Method
dc.typeArticle

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