Improvement of electrical characteristics of SnSe/Si heterostructure by integration of Si nanowires

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dc.authorscopusid16028137400en_US
dc.authorwosidK-3786-2018en_US
dc.contributor.authorCoşkun, Emre
dc.contributor.authorGüllü, H. H.
dc.contributor.authorEmir, C.
dc.contributor.authorParlak, M.
dc.date.accessioned2025-02-10T06:33:44Z
dc.date.available2025-02-10T06:33:44Z
dc.date.issued2021en_US
dc.departmentFakülteler, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this study, the effects of the nanowire geometry on Si wafer substrate were investigated for the SnSe/Si-nanowire heterojunction device and the obtained results were compared with the one fabricated on planar Si surface. Nanowires on Si surface were produced by metal-assisted etching method and the SnSe film layer was deposited by thermal evaporation technique. On both Si and glass surfaces, deposited film shows polycrystalline and single SnSe phase. From optical transmission measurements, optical band gap of this film was determined as 1.36 eV in a good agreement with the literature. All SnSe/Si heterostructures were found in a p-n diode behavior and the ideality factor and series resistance values were calculated as 2.40, 547 Ω, and 3.71, 1.57 × 103 Ω, for SnSe/Si-nanowire and SnSe/Si heterojunctions, respectively. As a result, an improvement in device characteristics concerning the planar Si structure was found by utilizing Si nanowire structure.en_US
dc.identifier.citationCoşkun, E., Güllü, H. H., Emir, C., & Parlak, M. (2021). Improvement of electrical characteristics of SnSe/Si heterostructure by integration of Si nanowires. Physica B: Condensed Matter, 604, 412669. https://doi.org/10.1016/j.physb.2020.412669en_US
dc.identifier.doi10.1016/j.physb.2020.412669en_US
dc.identifier.issn0921-4526 / 1873-2135
dc.identifier.scopus2-s2.0-85095823824en_US
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2020.412669
dc.identifier.urihttps://hdl.handle.net/20.500.12428/29590
dc.identifier.volume604en_US
dc.identifier.wosWOS:000612469900004en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorCoşkun, Emre
dc.institutionauthorid0000-0002-6820-3889
dc.language.isoengen_US
dc.publisherElsevier B.V.en_US
dc.relation.ispartofPhysica B: Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHeterojunctionen_US
dc.subjectNanowireen_US
dc.subjectSnSe Thin filmen_US
dc.titleImprovement of electrical characteristics of SnSe/Si heterostructure by integration of Si nanowiresen_US
dc.typearticleen_US

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