Improvement of electrical characteristics of SnSe/Si heterostructure by integration of Si nanowires
Yükleniyor...
Dosyalar
Tarih
2021
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier B.V.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, the effects of the nanowire geometry on Si wafer substrate were investigated for the SnSe/Si-nanowire heterojunction device and the obtained results were compared with the one fabricated on planar Si surface. Nanowires on Si surface were produced by metal-assisted etching method and the SnSe film layer was deposited by thermal evaporation technique. On both Si and glass surfaces, deposited film shows polycrystalline and single SnSe phase. From optical transmission measurements, optical band gap of this film was determined as 1.36 eV in a good agreement with the literature. All SnSe/Si heterostructures were found in a p-n diode behavior and the ideality factor and series resistance values were calculated as 2.40, 547 Ω, and 3.71, 1.57 × 103 Ω, for SnSe/Si-nanowire and SnSe/Si heterojunctions, respectively. As a result, an improvement in device characteristics concerning the planar Si structure was found by utilizing Si nanowire structure.
Açıklama
Anahtar Kelimeler
Heterojunction, Nanowire, SnSe Thin film
Kaynak
Physica B: Condensed Matter
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
604
Sayı
Künye
Coşkun, E., Güllü, H. H., Emir, C., & Parlak, M. (2021). Improvement of electrical characteristics of SnSe/Si heterostructure by integration of Si nanowires. Physica B: Condensed Matter, 604, 412669. https://doi.org/10.1016/j.physb.2020.412669
