Ruthenium(II) Complex Based Photodiode for Organic Electronic Applications

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dc.authoridAl-Ghamdi, Ahmed/0000-0002-5409-3770
dc.authoriddayan, osman/0000-0002-0764-1965
dc.authoridOcaya (Prof), R.O./0000-0002-5925-588X
dc.authoridAl-Sehemi, Abdullah G./0000-0002-6793-3038
dc.contributor.authorTataroglu, A.
dc.contributor.authorOcaya, R.
dc.contributor.authorDere, A.
dc.contributor.authorDayan, O.
dc.contributor.authorSerbetci, Z.
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorSoylu, M.
dc.date.accessioned2025-01-27T20:56:26Z
dc.date.available2025-01-27T20:56:26Z
dc.date.issued2018
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractIn this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current-voltage (I-V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (I broken vertical bar(b)), ideality factor (n) and series resistance (R (s)) of the photodiode were determined from the analysis of I-V characteristics. Moreover, the capacitance/conductance-voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications.
dc.description.sponsorshipKing Khalid University under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia [RCAMS/KKU/002-16]
dc.description.sponsorshipAuthors would like to acknowledge the support of the King Khalid University for this research through a grant RCAMS/KKU/002-16 under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia.
dc.identifier.doi10.1007/s11664-017-5882-1
dc.identifier.endpage833
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85032009804
dc.identifier.scopusqualityQ2
dc.identifier.startpage828
dc.identifier.urihttps://doi.org/10.1007/s11664-017-5882-1
dc.identifier.urihttps://hdl.handle.net/20.500.12428/26400
dc.identifier.volume47
dc.identifier.wosWOS:000418580800098
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Electronic Materials
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectTransition-metal complex
dc.subjectruthenium/Ru(II)
dc.subjectillumination effects
dc.titleRuthenium(II) Complex Based Photodiode for Organic Electronic Applications
dc.typeArticle

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