MCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV

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dc.contributor.authorAtalay, B.
dc.contributor.authorBrage, T.
dc.contributor.authorJonsson, P.
dc.contributor.authorHartman, H.
dc.date.accessioned2025-01-27T20:49:35Z
dc.date.available2025-01-27T20:49:35Z
dc.date.issued2019
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractWe present extensive multiconfiguration Dirac-Hartree-Fock and relativistic configuration interaction calculations including 106 states in doubly ionized silicon (Si III) and 45 states in triply ionized silicon (Si IV), which are important for astrophysical determination of plasma properties in different objects. These calculations represents an important extension and improvement of earlier calculations especially for Si III. The calculations are in good agreement with available experiments for excitation energies, transition properties, and lifetimes. Important deviations from the NIST-database for a selection of perturbed Rydberg series are discussed in detail.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [BIDEB 2219]; Swedish Research Council (VR) [2015-04842]; Swedish Research Council [2015-04842] Funding Source: Swedish Research Council
dc.description.sponsorshipBetul Atalay acknowledges financial support from the Scientific and Technological Research Council of Turkey (TUBITAK) - BIDEB 2219 International Post-Doctoral Research Fellowship Program. Tomas Brage, Per Jonsson, and Henrik Hartman acknowledge support from the Swedish Research Council (VR) under contract No. 2015-04842. Dr Atalay also would like to express her appreciation of the hospitality shown by the Division of Mathematical Physics at Lund University and by the Department of Materials Science and Applied Mathematics at Malmo University.
dc.identifier.doi10.1051/0004-6361/201935618
dc.identifier.issn0004-6361
dc.identifier.issn1432-0746
dc.identifier.scopus2-s2.0-85103687785
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1051/0004-6361/201935618
dc.identifier.urihttps://hdl.handle.net/20.500.12428/25237
dc.identifier.volume631
dc.identifier.wosWOS:000498947000001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherEdp Sciences S A
dc.relation.ispartofAstronomy & Astrophysics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20250125
dc.subjectatomic data
dc.titleMCDHF and RCI calculations of energy levels, lifetimes, and transition rates in Si III and Si IV
dc.typeArticle

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