Electroluminescence properties of a PIN structure made by nearly stoichiometric a-SiCx:H active layer

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dc.authoridSEL, Kivanc/0000-0002-4623-5206
dc.contributor.authorSel, Kivanc
dc.contributor.authorAkaoglu, Baris
dc.contributor.authorOzdemir, Orhan
dc.contributor.authorAtilgan, Ismail
dc.date.accessioned2025-01-27T20:58:04Z
dc.date.available2025-01-27T20:58:04Z
dc.date.issued2009
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstracta-SiCx:H PIN diode has been fabricated within a single pump-down process under the same deposition conditions used for doped and undoped PECVD grown thin films, whose optical and electrical properties are determined and compared with a-Si:H. Current-voltage characteristics of PIN diode are evaluated and concluded to be limited by tunnelling of holes at p-i interface into valence band tail states. Electroluminescence measurements revealed radiative monomolecular recombinations. Deconvolution of the luminescence spectra is utilized to analyse recombination mechanism to be dominated by the transitions between band tails and deep states, which are created by the large density of both silicon and carbon dangling bonds, probable in the stoichiometric a-SiCx:H film. Finally, a small luminescence peak around 1.9 eV would be an evidence of reduced probability of tail to tail transitions, than that of the transitions between tail and deep states. (C) 2008 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipState Planning Organization (DPT); Turkish Scientific and Technical Research Council (TUBITAK-BDP); Middle East Technical University (METU-BAP)
dc.description.sponsorshipThis work was carried out with the financial support of State Planning Organization (DPT), Turkish Scientific and Technical Research Council (TUBITAK-BDP) and Middle East Technical University (METU-BAP).
dc.identifier.doi10.1016/j.vacuum.2008.07.014
dc.identifier.endpage818
dc.identifier.issn0042-207X
dc.identifier.issue5
dc.identifier.scopus2-s2.0-56949089970
dc.identifier.scopusqualityQ1
dc.identifier.startpage813
dc.identifier.urihttps://doi.org/10.1016/j.vacuum.2008.07.014
dc.identifier.urihttps://hdl.handle.net/20.500.12428/26601
dc.identifier.volume83
dc.identifier.wosWOS:000262133500007
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofVacuum
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectAmorphous silicon carbide
dc.subjectPECVD
dc.subjectPin diode
dc.subjectEnergy band gap
dc.subjectConductivity
dc.subjectElectroluminescence
dc.titleElectroluminescence properties of a PIN structure made by nearly stoichiometric a-SiCx:H active layer
dc.typeArticle

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