Aggregation-induced red-shift emission from self-assembled planar naphthalene diimide dye: Interlayer in a Schottky-type photodiode and DFT studies

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dc.authoridAltinisik, Sinem/0000-0003-0238-0169
dc.authoridKoyuncu, Sermet/0000-0001-8352-8326
dc.authoridICIL, HURIYE/0000-0002-3389-6734
dc.contributor.authorKarsili, Pelin
dc.contributor.authorAbourajab, Arwa
dc.contributor.authorDinleyici, Meltem
dc.contributor.authorAltinisik, Sinem
dc.contributor.authorKoyuncu, Sermet
dc.contributor.authorDolek, Gamze
dc.contributor.authorKus, Mahmut
dc.date.accessioned2025-01-27T20:27:25Z
dc.date.available2025-01-27T20:27:25Z
dc.date.issued2024
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractIn this study, a planar, soluble, thin film-forming and self-assembled small naphthalene diimide (3) molecule with a subtle moiety at the imide-nitrogen was synthesized, and applied for the first time in literature as an interfacial layer between Al and p-Si layers in a Schottky-type photodiode. The morphology of the compound was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thin film structure and morphology affected the optical and electrical properties. The energy levels of the highest occupied molecular orbitals and lowest unoccupied molecular orbitals of 3 were calculated as -6.14 eV and -4.02 eV, corresponding to the band gap of 2.12 eV consistent with density functional theory (DFT) results. Differential scanning calorimetry (DSC) studies revealed a relatively high Tg value at 208 degrees C, indicating high-temperature applicability of the crystalline structure. The I-V measurements of Al/3/p-Si heterostructure were performed under dark and various light power intensities. The current steadily rose with each incremental 20 mW increase in light intensity. The reverse current increased almost 10-fold at 100 mW/cm2 illumination compared to dark measurement. The photodiode's responsivity, photosensitivity, and detectivity factors were elucidated. The photodiode's characteristic values, such as Io, n, phi b, and Rs, were obtained as 3.50 x 10-6 A, 8.24, 0.588 eV and 2.266 k Omega, respectively. The fabricated Schottky-type diode showed promising results for the optoelectronic field. The compound's perfect solubilities in a wide range of solvents, processability, excellent chemical and photochemical stabilities, and exciting optical, thermal and electrochemical properties make it an ideal candidate for thin film and molecular electronics applications.
dc.description.sponsorshipEastern Mediterranean University BAP-Projects Research Funding [BAPC-04-21-06]
dc.description.sponsorshipThe support from Eastern Mediterranean University BAP-Projects Research Funding (BAPC-04-21-06) is acknowledged. We want to thank Prof. Dr. Murat Y & imath;ld & imath;r & imath;m and Ali Akbar Hussaini from Selcuk University for providing equipment for photodiode studies.
dc.identifier.doi10.1016/j.optmat.2024.115902
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.scopus2-s2.0-85200148329
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2024.115902
dc.identifier.urihttps://hdl.handle.net/20.500.12428/22685
dc.identifier.volume155
dc.identifier.wosWOS:001288290400001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofOptical Materials
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectNaphthalene diimide (NDI)
dc.subjectPhotodiode
dc.subjectFilm-forming solubility
dc.subjectColor tunability
dc.subjectDFT
dc.titleAggregation-induced red-shift emission from self-assembled planar naphthalene diimide dye: Interlayer in a Schottky-type photodiode and DFT studies
dc.typeArticle

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