Enhanced Rectification of Lanthanum Hydroxide-Doped Graphene Quantum Dots/Silicon Heterostructures at Cryogenic Temperatures

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dc.authorid0000-0002-3629-726X
dc.authorid0000-0002-3949-6141
dc.contributor.authorAltan, Aslihan Anter
dc.contributor.authorBerktas, Zeynep
dc.contributor.authorKaymak, Nuriye
dc.contributor.authorYildiz, Mustafa
dc.contributor.authorDi Bartolomeo, Antonio
dc.contributor.authorOrhan, Elif
dc.date.accessioned2026-02-03T12:02:28Z
dc.date.available2026-02-03T12:02:28Z
dc.date.issued2025
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractThis study reports the fabrication and temperature-dependent electrical characterization of a heterojunction formed by lanthanum(III) hydroxide nanoparticles doped with polyethyleneimine-functionalised nitrogen-doped graphene quantum dots (La(OH)3NPs/PEI N-GQDs) on n-type silicon (n-type Si). The heterostructure exhibits diode-like behaviour in the 77-400 K temperature range, with rectification exceeding two orders of magnitude and increasing as the temperature decreases, reaching an exceptionally high value above 10(5) at 77 K. Temperature-dependent diode parameters, including barrier height, series resistance, and ideality factor, are extracted using the thermionic emission model, revealing that barrier height increases and ideality factor decreases with rising temperature. These trends, along with significant deviations from the ideal Richardson behaviour of Schottky diodes, are effectively explained by the Werner-G & uuml;ttler model, which attributes them to Gaussian spatial inhomogeneities of the barrier arising from interface states and nanocomposite-induced fluctuations. This study highlights the robust rectifying behaviour, excellent cryogenic performance, and wide-temperature applicability of the La(OH)3NPs/PEI N-GQDs on the Si heterostructure, establishing it as a promising platform for low-power diode applications under extreme thermal conditions.
dc.identifier.doi10.1049/mna2.70012
dc.identifier.issn1750-0443
dc.identifier.issue1
dc.identifier.scopus2-s2.0-105021380721
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1049/mna2.70012
dc.identifier.urihttps://hdl.handle.net/20.500.12428/34772
dc.identifier.volume20
dc.identifier.wosWOS:001611491800001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWiley
dc.relation.ispartofMicro & Nano Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WOS_20260130
dc.subjectheterojunction
dc.subjectgraphene quantum dots
dc.subjectlanthanum hydroxide nanoparticles
dc.subjectcryogenic rectification
dc.subjectbarrier inhomogeneity
dc.titleEnhanced Rectification of Lanthanum Hydroxide-Doped Graphene Quantum Dots/Silicon Heterostructures at Cryogenic Temperatures
dc.typeArticle

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