Investigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique

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dc.authoridColakoglu, Tahir/0000-0001-8949-8607
dc.contributor.authorColakoglu, T.
dc.contributor.authorParlak, M.
dc.contributor.authorOzder, S.
dc.date.accessioned2025-01-27T20:22:46Z
dc.date.available2025-01-27T20:22:46Z
dc.date.issued2008
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractThe optical properties of the Ag-In-Se (AlS) thin films deposited by e-beam technique were investigated by means of the optical transmittance measurements. The optical absorption coefficients of the films were found to vary from 10(3) to 10(5) cm(-1) over the wavelength range of 300-1100 nm. The real and imaginary parts of the refractive index and dielectric constant for the as-grown and annealed films in between 100 and 400 degrees C were evaluated by means of both envelope method (EM) and continuous wavelet transform (CWT) method and the results were in quite good agreement with each other. The refractive index, n, dispersion over the measured wavelength range was explained by applying single-oscillator model (SOM) and the related parameters were calculated. The optical absorption process for the AIS thin films was characterized by three direct transitions from three closely spaced valence bands to a single conduction band due to the splitting of the valence band under the influence of the tetragonal crystalline field and spin-orbit interaction. The direct optical band gap energy decreases as the annealing temperature increases because of the increase in the width of band tail states near valence-band edge caused by the Se segregation. The two distinct parameters of the quasicubic model; crystal-field splitting Delta(CF), and spin-orbit splitting, Delta(SO), were calculated for as-grown and annealed AlS thin films. (C) 2008 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.jnoncrysol.2008.03.014
dc.identifier.endpage3636
dc.identifier.issn0022-3093
dc.identifier.issue30
dc.identifier.scopus2-s2.0-44949161882
dc.identifier.scopusqualityQ1
dc.identifier.startpage3630
dc.identifier.urihttps://doi.org/10.1016/j.jnoncrysol.2008.03.014
dc.identifier.urihttps://hdl.handle.net/20.500.12428/22022
dc.identifier.volume354
dc.identifier.wosWOS:000257590400018
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofJournal of Non-Crystalline Solids
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectthin films
dc.subjectternary semiconductor
dc.subjectrefractive index
dc.subjectdielectric constant
dc.subjectoptical properties
dc.subjectabsorption
dc.titleInvestigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique
dc.typeArticle

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