PEI N-doped graphene quantum dots/p-type silicon Schottky diode

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dc.contributor.authorBerktas, Zeynep
dc.contributor.authorYıldız, Mustafa
dc.contributor.authorSeven, Elanur
dc.contributor.authorOrhan, Elif Oz
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2025-01-27T20:24:25Z
dc.date.available2025-01-27T20:24:25Z
dc.date.issued2022
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractGraphene Quantum Dots (GQDs) are graphene nanoparticles with exceptional properties and a remarkable material for new technologies. Especially, GQDs/semiconductor junctions (GQDs/S), which have a high potential to open doors to new fields of study such as sensing, detection, and communication have started to attract great attention in the scientific community in the last few years. Functionalization of GQDs with several functional groups to develop their properties is one of the hot topics of research. In this context, we have investigated the properties of functionalized GQDs/p-type Si diode in this study. Polyethylenimine (PEI) functionalized nitrogendoped GQDs (PEI/N/GQDs) have been successfully produced by the hydrothermal method. Afterward, we fabricated the Al/PEI/N/GQDs/p-Si diode. The parameters of GQDs-based Schottky diode have been investigated from current-voltage (I-V) measurements at 300 K. The barrier heights (Phi(b)) of the diode obtained from Thermionic Emission (TE) theory, Norde's, and Cheung's approaches are 0.76 eV, 0.82 eV, and 0.66 eV, respectively. The ratio of rectification (RR) of the diode has been calculated to be approximately 2.8 x 10(4) at +/- 5 V. In addition, the surface state density (N-ss) versus (E-ss-Ev) profile of the diode has been also obtained, by taking into account the voltage dependence of the ideality factor (n) and Phi(b). The average value of them has been found as 1.90 x 10(13) eV(- 1) cm(-2), which is very suitable for this structure. The obtained results show that the prepared Al/PEI/N/GQDs/p-Si has Schottky diode behavior.
dc.identifier.doi10.1016/j.flatc.2022.100436
dc.identifier.issn2452-2627
dc.identifier.scopus2-s2.0-85140045965
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.flatc.2022.100436
dc.identifier.urihttps://hdl.handle.net/20.500.12428/22209
dc.identifier.volume36
dc.identifier.wosWOS:000878018300003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofFlatchem
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectGraphene Quantum Dots (GQDs)
dc.subjectSchottky diode
dc.subjectI -V characteristics
dc.subjectPEI functionalized N-doped GQDs
dc.titlePEI N-doped graphene quantum dots/p-type silicon Schottky diode
dc.typeArticle

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