FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS

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dc.authoridCoskun, Emre/0000-0002-6820-3889
dc.authoridGullu, Hasan Huseyin/0000-0001-8541-5309
dc.contributor.authorHosseini, A.
dc.contributor.authorGullu, H. H.
dc.contributor.authorCoskun, E.
dc.contributor.authorParlak, M.
dc.contributor.authorErcelebi, C.
dc.date.accessioned2025-01-27T20:59:38Z
dc.date.available2025-01-27T20:59:38Z
dc.date.issued2019
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractTitanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO(2 )film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV-visual (UV-Vis) spectral and dark current-voltage (I-V) measurement analyses. The deposited film layer was found to be homogeneous structure with crack-free surface. The bandgap value of TiO2 film was determined as 3.6 eV and transmission was around 65-85% in the spectral range of 320-1100 nm. The conductivity type of the deposited film was determined as n-type by hot probe method. These values make TiO2 film a suitable candidate as the n-type window layer in possible diode applications. TiO2 film was also deposited on p-Si (111) wafer to obtain Al/n-TiO2/p-Si/Al heterojunction device structure. The dark I-V characteristic was studied to determine the possible conduction mechanisms and diode parameters.
dc.identifier.doi10.1142/S0218625X18502050
dc.identifier.issn0218-625X
dc.identifier.issn1793-6667
dc.identifier.issue6
dc.identifier.scopus2-s2.0-85047928219
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1142/S0218625X18502050
dc.identifier.urihttps://hdl.handle.net/20.500.12428/26760
dc.identifier.volume26
dc.identifier.wosWOS:000474376100008
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWorld Scientific Publ Co Pte Ltd
dc.relation.ispartofSurface Review and Letters
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectTiO2
dc.subjectheterostructure
dc.subjectmagnetron sputtering
dc.subjectdiode characterization
dc.titleFABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS
dc.typeArticle

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