Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

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dc.contributor.authorAlcinkaya, Burak
dc.contributor.authorSel, Kivanc
dc.date.accessioned2025-01-27T20:20:28Z
dc.date.available2025-01-27T20:20:28Z
dc.date.issued2018
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractThe properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E-04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.
dc.identifier.doi10.1016/j.sse.2017.10.042
dc.identifier.endpage114
dc.identifier.issn0038-1101
dc.identifier.issn1879-2405
dc.identifier.scopus2-s2.0-85033471182
dc.identifier.scopusqualityQ3
dc.identifier.startpage109
dc.identifier.urihttps://doi.org/10.1016/j.sse.2017.10.042
dc.identifier.urihttps://hdl.handle.net/20.500.12428/21720
dc.identifier.volume139
dc.identifier.wosWOS:000417283000016
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofSolid-State Electronics
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectHydrogenated amorphous silicon carbide
dc.subjectPhosphorus doping
dc.subjectConductivity
dc.subjectActivation energy
dc.subjectStandard transport model
dc.subjectNearest neighbor hopping
dc.titleEffects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films
dc.typeArticle

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