Effects of Si nanowire on the device properties of n-ZnSe/p-Si heterostructure

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dc.authoridColakoglu, Tahir/0000-0001-8949-8607
dc.authoridCoskun, Emre/0000-0002-6820-3889
dc.authoridGullu, Hasan Huseyin/0000-0001-8541-5309
dc.contributor.authorCoskun, E.
dc.contributor.authorGullu, H. H.
dc.contributor.authorColakoglu, T.
dc.contributor.authorEmir, C.
dc.contributor.authorBozdogan, E.
dc.contributor.authorParlak, M.
dc.date.accessioned2025-01-27T20:58:04Z
dc.date.available2025-01-27T20:58:04Z
dc.date.issued2019
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractThe semiconductor nanowire (NW) technology has raised attention owing to its one-dimensional geometry as a solution for lattice mismatch in the fabricated heterostructures. Although, SiNWs have been investigated for various device technologies, there is no published work on the p-n junction formed by deposition of ZnSe thin film on these NW structures, in which this film layer has significant optical and electrical properties in optoelectronics applications. The aim of this study is determining the device properties of n-ZnSe/SiNW heterojunction and obtaining the enhancement in the device application of the NW structure on Si surface with comparing to planar surface. SiNW was produced by metal assisted etching method as a cost-efficient process, and the ZnSe film was deposited on SiNW and planar Si substrates by thermal evaporation of elemental sources. The optical band gap of the deposited ZnSe film was determined as 2.7eV which is in a good agreement with literature. The ideality factor and series resistance values of the ZnSe/SiNW and ZnSe/Si heterojunctions were calculated as 3.12, 461 , and 4.52, 7.26x103, respectively. As a result of utilizing SiNW structure, a spectacular improvement in terms of the physical parameters related to device properties was achieved.
dc.identifier.doi10.1007/s10854-019-00769-4
dc.identifier.endpage4765
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue5
dc.identifier.scopus2-s2.0-85060622439
dc.identifier.scopusqualityQ2
dc.identifier.startpage4760
dc.identifier.urihttps://doi.org/10.1007/s10854-019-00769-4
dc.identifier.urihttps://hdl.handle.net/20.500.12428/26598
dc.identifier.volume30
dc.identifier.wosWOS:000461168600044
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectSilicon Nanowires
dc.subjectThin-Films
dc.subjectMechanism
dc.subjectArrays
dc.titleEffects of Si nanowire on the device properties of n-ZnSe/p-Si heterostructure
dc.typeArticle

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