Device application of AgGa0.5In0.5Se2 thin films deposited by thermal sequential stacked layer method

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dc.authoridCoskun, Emre/0000-0002-6820-3889
dc.contributor.authorCoskun, E.
dc.contributor.authorGullu, H. H.
dc.contributor.authorParlak, M.
dc.date.accessioned2025-01-27T21:03:39Z
dc.date.available2025-01-27T21:03:39Z
dc.date.issued2014
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractAn In/n-AgGa0.5In0.5Se2/p-Si/Al heterostructure was produced by thermal sequential stacked layer deposition method and the device characteristics were investigated. The compositional analysis showed that the depositions of the intended stoichiometric composition of AgGa0.5In0.5Se2 structure were obtainable by controlling and providing the necessary deposition conditions during the deposition processes. By means of the room temperature Hall effect and transmission measurements, the carrier concentration and optical band gap values were determined as 9 x 10(15) cm(-3) and 1.65 eV, respectively. In addition, temperature- dependent current-voltage (I-V) and the room temperature capacitance-voltage (C-V) measurements of this heterostructure were carried out. The rectification factor was obtained as about 10(4) at 1.20V for all sample temperatures. Depending on the change in the temperature, the series and shunt resistances were calculated as 10(1) and 10(6) Omega, respectively. The studies on the current transport mechanisms showed that there were two different mechanisms at two different voltage regions: tunneling enhanced recombination mechanism in the voltage range of 0.08 and 0.30V and the space charge limited current mechanism in the voltage range of 0.30 and 0.60 V. The barrier height, built-in potential and interface states density of the deposited heterostructure were also calculated and discussed.
dc.description.sponsorshipMiddle East Technical University (METU-BAP) [BAP-01-05-2014-006]; TUBITAK-BIDEB
dc.description.sponsorshipThis work was financed by Middle East Technical University (METU-BAP) under Grant No. BAP-01-05-2014-006. Also, one of the authors would like to thank to TUBITAK-BIDEB for the financial support during this study.
dc.identifier.doi10.1088/2053-1591/1/4/046407
dc.identifier.issn2053-1591
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84953276617
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/2053-1591/1/4/046407
dc.identifier.urihttps://hdl.handle.net/20.500.12428/27392
dc.identifier.volume1
dc.identifier.wosWOS:000209665400128
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofMaterials Research Express
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectI-V
dc.subjectC-V measurements
dc.subjectthin films
dc.subjectdevice characterization
dc.subjecttransport mechanism
dc.titleDevice application of AgGa0.5In0.5Se2 thin films deposited by thermal sequential stacked layer method
dc.typeArticle

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