Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

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dc.authoridGUNES, IBRAHIM/0000-0001-9388-6223
dc.authoridSEL, Kivanc/0000-0002-4623-5206
dc.contributor.authorSel, Kivanc
dc.contributor.authorGunes, Ibrahim
dc.date.accessioned2025-01-27T20:49:27Z
dc.date.available2025-01-27T20:49:27Z
dc.date.issued2012
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractRoom temperature photoluminescence (PL) spectrum of hydrogenated amorphous silicon carbide (a-SiCx:H) thin films was modeled by a joint density of tail states approach. In the frame of these analyses, the density of tail states was defined in terms of empirical Gaussian functions for conduction and valance bands. The PL spectrum was represented in terms of an integral of joint density of states functions and Fermi distribution function. The analyses were performed for various values of energy band gap, Fermi energy and disorder parameter, which is a parameter that represents the width of the energy band tails. Finally, the model was applied to the measured room temperature PL spectra of a-SiCx:H thin films deposited by plasma enhanced chemical vapor deposition system, with various carbon contents, which were determined by X-ray photoelectron spectroscopy measurements. The energy band gap and disorder parameters of the conduction and valance band tails were determined and compared with the optical energies and Urbach energies, obtained by UV-Visible transmittance measurements. As a result of the analyses, it was observed that the proposed model sufficiently represents the room temperature PL spectra of a-SiCx:H thin films. (C) 2012 Elsevier B.V. All rights reserved.
dc.description.sponsorshipCanakkale Onsekiz Mart University [COMU-BDP/2011-010]
dc.description.sponsorshipThis work was carried out with the financial support of Canakkale Onsekiz Mart University (COMU-BDP/2011-010). Thanks to Assoc. Prof. Dr. Baris Akaoglu and Prof. Dr. Ismail Atilgan for sharing their laboratory facilities.
dc.identifier.doi10.1016/j.tsf.2012.07.114
dc.identifier.endpage7065
dc.identifier.issn0040-6090
dc.identifier.issue24
dc.identifier.scopus2-s2.0-84866014182
dc.identifier.scopusqualityQ2
dc.identifier.startpage7062
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2012.07.114
dc.identifier.urihttps://hdl.handle.net/20.500.12428/25162
dc.identifier.volume520
dc.identifier.wosWOS:000308691700005
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofThin Solid Films
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectPhotoluminescence
dc.subjectDensity of tail states
dc.subjectHydrogenated amorphous silicon carbide
dc.titleRoom temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films
dc.typeArticle

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