Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure

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dc.authoridKaya, İsmet / 0000-0002-9813-2962
dc.authoridDemir, Ramazan / 0000-0003-4130-4927
dc.contributor.authorDemir, Ramazan
dc.contributor.authorKaya, İsmet
dc.date.accessioned2025-01-27T19:22:40Z
dc.date.available2025-01-27T19:22:40Z
dc.date.issued2024
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractWe fabricated a heterojunction structure composed of n-CdS and p-C10H10N2 films. The CdS film was prepared using the CBD method, while the C10H10N2 film was prepared using the spin coating method. Later, we performed the current-voltage (I-V) measurement of this PN diode which we made using Keithley 2400 sourcemeter. As can be seen from the logI-V diagram, this heterojunction structure exhibits rectifying properties. Using traditional methods, an ideality factor (n) of 1.93 and a barrier height value (Φb) of 0.79 eV were determined. An ideality factor of more than one indicates non-ideal I-V behavior in the CdS/C10H10N2 heterojunction diode formed. The interface layer, interface states and series resistance are some of the causes of this deviation. Moreover, Cheung's functions and a modified Norde function were used to determine the diode parameters, such as ideality factor, barrier height, and series resistance. With the Cheung method, n=4.33, series resistance (RS)=168.65 kΩ and Φb=0.62 eV were found. Additionally, RS=686.08 kΩ and Φb=0.78 eV were found by the Norde method. Consistent barrier height values were found in all methods through comparison, suggesting compatibility. However, it was discovered that the series resistance values yielded by the Norde function exceeded those obtained by the Cheung functions.
dc.identifier.doi10.18466/cbayarfbe.1396129
dc.identifier.endpage28
dc.identifier.issn1305-130X
dc.identifier.issn1305-1385
dc.identifier.issue1
dc.identifier.startpage23
dc.identifier.trdizinid1230709
dc.identifier.urihttps://doi.org/10.18466/cbayarfbe.1396129
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/1230709
dc.identifier.urihttps://hdl.handle.net/20.500.12428/15177
dc.identifier.volume20
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.publisherManisa Celal Bayar Üniversitesi Fen Bilimleri Enstitüsü
dc.relation.ispartofCelal Bayar Üniversitesi Fen Bilimleri Dergisi
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_TRD_20250125
dc.subject4-Amino-2-Methylquinoline, C10H10N2, CdS, Heterojunction Diode, Thin Film
dc.titleElectrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure
dc.typeArticle

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