Characterization of Co-evaporated Cu-Ag-In-Se Thin Films

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dc.authoridCoskun, Emre/0000-0002-6820-3889
dc.authoridGullu, Hasan Huseyin/0000-0001-8541-5309
dc.contributor.authorGullu, H. H.
dc.contributor.authorCoskun, E.
dc.contributor.authorParlak, M.
dc.date.accessioned2025-01-27T20:49:28Z
dc.date.available2025-01-27T20:49:28Z
dc.date.issued2014
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractIn this study, annealing effect on the structural, electrical, and optical characteristics of the quaternary Cu-Ag-In-Se (CAIS) thin films was investigated. These samples were deposited by co-evaporation of the Cu, Ag, In2Se3, and Se sources at the substrate temperature of 300 degrees C. The structural properties of the thin films were analyzed by means of X-ray diffraction, and the results indicated that all of the films were in the polycrystalline structure with the preferred orientation along (112) direction. From the optical measurements, the band gap values were found to vary between 1.38 and 1.45 eV with annealing processes. The temperature-dependent electrical conductivity of the samples was measured in the temperature range of 90-400 K. The films gained degenerate behavior with increasing annealing temperature. The carrier conduction mechanism was determined at high- and low-temperature regions by comparing thermionic emission and hopping parameters. Photoconductivity of the as-grown film showed that there was an increase in conductivity with increasing illumination intensity. From this measurement, the variation of photocurrent as a function of illumination intensity was determined.
dc.description.sponsorshipTUBITAK-BIDEB
dc.description.sponsorshipThe authors would like to thank to TUBITAK-BIDEB for the financial supports during this study.
dc.identifier.doi10.1007/s13538-014-0270-2
dc.identifier.endpage725
dc.identifier.issn0103-9733
dc.identifier.issn1678-4448
dc.identifier.issue6
dc.identifier.scopus2-s2.0-84919948900
dc.identifier.scopusqualityQ3
dc.identifier.startpage719
dc.identifier.urihttps://doi.org/10.1007/s13538-014-0270-2
dc.identifier.urihttps://hdl.handle.net/20.500.12428/25175
dc.identifier.volume44
dc.identifier.wosWOS:000344477200016
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofBrazilian Journal of Physics
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectThin film
dc.subjectThermal evaporation
dc.subjectThermionic emission
dc.subjectVariable range hopping
dc.subjectPhotoconductivity
dc.titleCharacterization of Co-evaporated Cu-Ag-In-Se Thin Films
dc.typeArticle

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