Sol-gel derived ZnO:Sn thin films and fabrication of n-ZnO:Sn/p-Si heterostructure

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dc.authorscopusid58349869400en_US
dc.authorscopusid56627311400en_US
dc.authorwosidA-1045-2018en_US
dc.authorwosid-en_US
dc.contributor.authorSarıca, Emrah
dc.contributor.authorGüneş, İbrahim
dc.contributor.authorAkyüz, İdris
dc.contributor.authorBilgin, Vildan
dc.contributor.authorErtürk, Kadir
dc.date.accessioned2025-02-10T06:57:16Z
dc.date.available2025-02-10T06:57:16Z
dc.date.issued2021en_US
dc.departmentFakülteler, Fen Fakültesi, Fizik Bölümüen_US
dc.departmentMeslek Yüksekokulları, Biga Meslek Yüksekokulu, Elektrik ve Enerji Bölümüen_US
dc.description.abstractIn this work ZnO:Sn thin films were deposited onto glass and p-Si substrates by spin coating of prepared sols which contains different amounts of Zn(CH3COO)2·2H2O and SnCl2 (0, 5, 10 and 15%). Physical properties of ZnO films were examined as a function of SnCl2 in prepared sols. In addition to that, heterostructure examinations were also carried out by depositing all films on p-Si substrates as well. XRD studies revealed that all films have c-axis orientation with crystallite sizes between 38 and 47 nm. AFM and SEM images showed that morphology of the films remarkably deteriorated with the increase in amount of SnCl2 in sol. Optical transmittance and absorbance spectra showed that films have high transmittance and low absorbance in the visible region. Besides, optical band gap increased from 3.27 eV to 3.37 eV. Additional band gap energies were determined for 10% and 15% Sn doped ZnO films. Room temperature photoluminescence spectra for all films were deconvoluted for the evaluation of all emission bands and it was noted that incorporation of SnCl2 into sol led to enhancement of UV-blue emission bands and caused emission bands related to oxygen vacancies to diminish. Four-point-probe measurements revealed that electrical resistivity of ZnO:Sn films increased from 3.20 × 100 Ωcm to 2.82 × 104 Ωcm and diode ideality factor of Ag/ZnO:Sn/p-Si/Au heterostructure was calculated to be in the range of 2.14–4.59 while zero-bias barrier height is in the range of 0.63–0.78 eV.en_US
dc.identifier.citationSarıca, E., Güneş, İ., Akyüz, I., Bilgin, V., & Ertürk, K. (2021). Sol-gel derived ZnO:Sn thin films and fabrication of n-ZnO:Sn/p-Si heterostructure. Optical Materials, 118, 111283. https://doi.org/10.1016/j.optmat.2021.111283
dc.identifier.doi10.1016/j.optmat.2021.111283en_US
dc.identifier.issn0925-3467 / 1873-1252
dc.identifier.scopus2-s2.0-85107737387en_US
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2021.111283
dc.identifier.urihttps://hdl.handle.net/20.500.12428/29593
dc.identifier.volume118en_US
dc.identifier.wosWOS:000674489500005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorGüneş, İbrahim
dc.institutionauthorBilgin, Vildan
dc.institutionauthorid0000-0001-9388-6223
dc.institutionauthorid0000-0002-0937-6763
dc.language.isoengen_US
dc.publisherElsevier B.V.en_US
dc.relation.ispartofOptical Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAg/ZnO:Sn/Si/Auen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSpin coatingen_US
dc.subjectThermionic emissionen_US
dc.subjectTin dopingen_US
dc.subjectZinc oxideen_US
dc.titleSol-gel derived ZnO:Sn thin films and fabrication of n-ZnO:Sn/p-Si heterostructureen_US
dc.typearticleen_US

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