Silicon based photodetector with Ru(II) complexes organic interlayer

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dc.authoridAl-Sehemi, Abdullah G./0000-0002-6793-3038
dc.authoridAl-Ghamdi, Ahmed/0000-0002-5409-3770
dc.authoriddayan, osman/0000-0002-0764-1965
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorDere, A.
dc.contributor.authorDayan, Osman
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorSerbetci, Z.
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoglu, F.
dc.date.accessioned2025-01-27T20:24:25Z
dc.date.available2025-01-27T20:24:25Z
dc.date.issued2019
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractIn present work, the electrical properties and illumination effects were investigated for the silicon based photodetector with organic Ru(II) complexes interfacial layer. The current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements were analyzed to determine electrical and photoelectrical properties under dark and different solar light intensity conditions. The reverse bias current values under light conditions were higher than dark conditions, and this situation demonstrates that the fabricated device displays a photo conducting behavior. Besides, some crucial electrical parameters such as series resistance, barrier height and ideality factor values of prepared device were calculated by using current-voltage measurements. The ideality factor and barrier height values of fabricated device were calculated as 9.42 and 0.59 for dark condition. Besides to these experiments, transient photocurrent and photo-capacitance/conductance were also investigated under different light conditions. It was determined from transient measurements that the fabricated device has a high sensitivity to light. The photoresponse of the diode was determined to be around 4479 +/- 1.9 under 100 mW/cm(2 )illumination. The examined C/G-V characteristics of the fabricated device strongly depend on voltage and frequency. The analyzed results suggest that the fabricated Al/Ru(II) complexes/p-Si/Al device can be used in rapidly developing optoelectronic applications, especially for the organic materials-based photodetector technology.
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK) [114Z439]; King Khalid University under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia [RCAMS/KKU/00718]; ELAZIG KOSGEB provincial Directorate of Small and Medium Enterprises Develeopment Organization of TURKEY
dc.description.sponsorshipThis research has been partially supported by the Scientific and Technical Research Council of Turkey (TUBITAK) (Project no: 114Z439). Authors would like to acknowledge the support of King Khalid University for this research through a grant RCAMS/KKU/00718 under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia. This study also was supported by ELAZIG KOSGEB provincial Directorate of Small and Medium Enterprises Develeopment Organization of TURKEY.
dc.identifier.doi10.1016/j.mssp.2018.11.035
dc.identifier.endpage430
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85058710311
dc.identifier.scopusqualityQ1
dc.identifier.startpage422
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2018.11.035
dc.identifier.urihttps://hdl.handle.net/20.500.12428/22208
dc.identifier.volume91
dc.identifier.wosWOS:000454537700059
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectMorphological analyses
dc.subjectElectrical properties
dc.subjectRu(II) complexes
dc.subjectPhotodetector
dc.subjectIllumination effect
dc.titleSilicon based photodetector with Ru(II) complexes organic interlayer
dc.typeArticle

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