Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells

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dc.contributor.authorEygi, Zeynep Deniz
dc.contributor.authorDas, Ujjwal
dc.contributor.authorHegedus, Steven
dc.contributor.authorBirkmire, Robert
dc.date.accessioned2025-01-27T20:24:23Z
dc.date.available2025-01-27T20:24:23Z
dc.date.issued2013
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractp-type silicon heterojunction solar cells are investigated in terms of doping concentration of emitter a-Si: H(n) layer and thickness of emitter-intrinsic buffer a-Si: H(n/i) layers. Control of doping concentration of the amorphous layer is essential to gain sufficient conductivity and junction potential while avoiding an increase in defect density of the a-Si: H(n) layer. Inserting a-Si: H(i) provides high passivation quality by reducing a-Si: H/c-Si interface recombination and leads to a higher open circuit voltage. Properties and thicknesses of both a-Si: H(n) and a-Si: H(i) have a significant role on the performance of silicon heterojunction cell. In this paper, emitter a-Si: H(n) and buffer a-Si: H(i) layers thicknesses are optimized at the optimum gas phase doping concentration in order to obtain high efficiencies. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792510]
dc.identifier.doi10.1063/1.4792510
dc.identifier.issn1941-7012
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84874844476
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1063/1.4792510
dc.identifier.urihttps://hdl.handle.net/20.500.12428/22192
dc.identifier.volume5
dc.identifier.wosWOS:000315596300027
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.ispartofJournal of Renewable and Sustainable Energy
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectC-Si Heterojunction
dc.subjectOptimization
dc.subjectJunction
dc.subjectStates
dc.titleOptimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells
dc.typeArticle

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