Characterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light

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dc.authoridDEMIRSELCUK, Barbaros/0000-0002-5264-5535
dc.authoridSARICA, Emrah/0000-0002-9339-5114
dc.contributor.authorBilgin, Vildan
dc.contributor.authorSarica, Emrah
dc.contributor.authorDemirselcuk, Barbaros
dc.contributor.authorErturk, Kadir
dc.date.accessioned2025-01-27T20:47:51Z
dc.date.available2025-01-27T20:47:51Z
dc.date.issued2020
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractIn this work CdS thin films were deposited onto glass and p-Si substrates by ultrasonically spraying of precursor solutions prepared in molarity ranging from 0.025 M, to 0.1 M. Structural investigations revealed that all films have hexagonal structure and mean crystallite size was found to be in the range of 18 nm-21 nm. On the other hand, CdS films exhibited 65-70% optical transmittance and band gap energy for all films was found to be about 2.42 eV. Electrical measurements of CdS/Si heterojunctions were carried out under both dark and illumination conditions. Calculated ideality factor and zero-bias barrier height ranged from 3.02 to 2.66 and 0.74 eV-0.78 eV according to TE theory whereas they ranged from 6.91 to 4.73 and 0.71 eV-0.74 eV according to Cheungs' method. Increase in reverse saturation current when heterojunctions were illuminated indicated that they have good sensitivity to solar light.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUB.ITAK) [111T057]
dc.description.sponsorshipThis work was supported by The Scientific and Technological Research Council of Turkey (TUB.ITAK) under the project number 111T057.
dc.identifier.doi10.1016/j.physb.2020.412499
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85091898477
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2020.412499
dc.identifier.urihttps://hdl.handle.net/20.500.12428/25065
dc.identifier.volume599
dc.identifier.wosWOS:000583242600005
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectCdS films
dc.subjectUltrasonic spray pyrolysis
dc.subjectCdS/Si heterojunctions
dc.subjectStructural properties
dc.subjectOptical properties
dc.subjectCurrent-voltage characteristics
dc.titleCharacterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light
dc.typeArticle

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