Device behavior of an In/p-Ag(Ga,In)Te2/n-Si/Ag heterojunction diode

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dc.authoridCoskun, Emre/0000-0002-6820-3889
dc.authoridCandan, Idris/0000-0002-9950-713X
dc.authoridSURUCU, Ozge/0000-0002-8478-1267
dc.authoridGullu, Hasan Huseyin/0000-0001-8541-5309
dc.contributor.authorCoskun, E.
dc.contributor.authorGullu, H. H.
dc.contributor.authorCandan, I.
dc.contributor.authorBayrakli, O.
dc.contributor.authorParlak, M.
dc.contributor.authorErcelebi, C.
dc.date.accessioned2025-01-27T21:03:39Z
dc.date.available2025-01-27T21:03:39Z
dc.date.issued2015
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractIn this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 eV. The structural analysis was carried out by means of X-ray diffraction. Current-Voltage (I-V) measurements depending on the sample temperature were performed to investigate the device characteristics and the dominant conduction mechanism in an In/p-AGIT/n-Si/Ag structure. The series and shunt resistances were calculated by the help of parasitic resistance analysis as 5.73 and 1.57 x 10(4) Omega cm(2), respectively at room temperature. The ideality factors and barrier heights were evaluated as a function of sample temperature. In the low bias region, the thermionic emission together with the generation-recombination mechanism was investigated as the dominant transport mechanism; however, in the high bias region, space charge limited current was analyzed as the other effective mechanism in the carrier conduction. The built-in potential of the device was also determined by the help of capacitance-voltage measurements. (C) 2015 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipMiddle East Technical University (METU-BAP) [BAP-01-05-2013-005]; TUBITAK-BIDEB
dc.description.sponsorshipThis work was financed by Middle East Technical University (METU-BAP) under Grant no. BAP-01-05-2013-005. Also, one of the authors would like to thank to TUBITAK-BIDEB for the financial supports during this study.
dc.identifier.doi10.1016/j.mssp.2015.02.043
dc.identifier.endpage145
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84923926879
dc.identifier.scopusqualityQ1
dc.identifier.startpage138
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2015.02.043
dc.identifier.urihttps://hdl.handle.net/20.500.12428/27391
dc.identifier.volume34
dc.identifier.wosWOS:000353844500021
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectThin films
dc.subjectHeterojunctions
dc.subjectDeposition
dc.subjectElectrical transport
dc.subjectThermal analysis
dc.titleDevice behavior of an In/p-Ag(Ga,In)Te2/n-Si/Ag heterojunction diode
dc.typeArticle

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