Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films

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dc.authoridCoskun, Emre/0000-0002-6820-3889
dc.authoridGullu, Hasan Huseyin/0000-0001-8541-5309
dc.contributor.authorCoskun, E.
dc.contributor.authorGullu, H. H.
dc.contributor.authorParlak, M.
dc.contributor.authorErcelebi, C.
dc.date.accessioned2025-01-27T20:54:14Z
dc.date.available2025-01-27T20:54:14Z
dc.date.issued2015
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractThe structural properties and electrical conduction mechanisms of Ag-Ga-In-Te thin films deposited by a combination of e-beam and thermal evaporation methods were studied for various annealing temperatures. Structural analysis showed the existence of InTe and InTe binary phases at the early stage of crystallization and monophase of AgGaInTe with the main orientation along (112) direction following the post-annealing at 400 C. The effects of the structural changes on electrical properties and temperature dependence of the electrical conductivity of Ag-Ga-In-Te thin films were studied in the temperature range of 90-400 K. The analysis of electrical conductivity revealed the Efros-Shklovskii variable range hopping (VRH) mechanism in between 90 and 210 K and Mott VRH mechanisms for the temperature range of 250-400 K for all deposited films. The VRH parameters including average hopping distance, average hopping energy and characteristic temperature coefficient for Efros-Shklovskii and Mott VRH mechanisms were determined and discussed in detail.
dc.description.sponsorshipMiddle East Technical University (METU-BAP) [BAP-01-05-2013-005]; Scientific and Technological Research Council of Turkey-BIDEP
dc.description.sponsorshipThis work was financed by Middle East Technical University (METU-BAP) under Grant No. BAP-01-05-2013-005. Also, one of the authors would like to thank to The Scientific and Technological Research Council of Turkey-BIDEP for the financial supports during this study.
dc.identifier.doi10.1007/s10909-014-1245-y
dc.identifier.endpage173
dc.identifier.issn0022-2291
dc.identifier.issn1573-7357
dc.identifier.issue3-4
dc.identifier.scopus2-s2.0-84920596582
dc.identifier.scopusqualityQ3
dc.identifier.startpage162
dc.identifier.urihttps://doi.org/10.1007/s10909-014-1245-y
dc.identifier.urihttps://hdl.handle.net/20.500.12428/26019
dc.identifier.volume178
dc.identifier.wosWOS:000347529100004
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer/Plenum Publishers
dc.relation.ispartofJournal of Low Temperature Physics
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectThin films
dc.subjectElectrical conductivity
dc.subjectTransport mechanism
dc.subjectCrystal structure
dc.subjectX-ray diffraction
dc.titleStudy on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films
dc.typeArticle

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