Nanowire geometry effects on devices and transport mechanisms: SnS2/SiNW heterojunction

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dc.authoridCoskun, Emre/0000-0002-6820-3889
dc.authoridEmir, Cansu/0000-0003-4395-064X
dc.contributor.authorCoskun, Emre
dc.contributor.authorEmir, Cansu
dc.contributor.authorTerlemezoglu, Makbule
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2025-01-27T20:54:28Z
dc.date.available2025-01-27T20:54:28Z
dc.date.issued2023
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractThe semiconductor nanowire technology has become essential in developing more complex and efficient devices. In this study, the Si nanowire (SiNW) heterojunction structure with a two-dimensional SnS2 thin film was investigated. The SiNW array was created by the metal-assisted etching method because of length control and production over large areas of nanowires. The created SiNW has more diminishing reflectivity compared with Si planar substrate. The diode characteristics of SnS2/SiNW and SnS2/Si planar heterojunctions were investigated by dark current analysis at room temperature, and the improving diode characteristics by the three-dimensional interface between SiNW and SnS2 thin film were discussed. Transport mechanisms of the SiNW heterojunction were also studied for various methods. Thermionic emission and thermally assisted tunneling models are the dominant mechanisms for low voltages (0.02-0.20 V), and the space charge limiting current mechanism dominates the current for comparingly high voltages (0.20-0.40 V). All the values reveal the significant impact of the SiNW on heterojunctions for improving efficiency.
dc.description.sponsorshipThis work was supported by the Turkish Scientific and Technological Research Council (TUBITAK MFAG no. 120F325). [120F325]; Turkish Scientific and Technological Research Council
dc.description.sponsorshipThis work was supported by the Turkish Scientific and Technological Research Council (TUBITAK MFAG no. 120F325).
dc.identifier.doi10.1007/s10853-023-08891-9
dc.identifier.issn0022-2461
dc.identifier.issn1573-4803
dc.identifier.scopus2-s2.0-85173483945
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1007/s10853-023-08891-9
dc.identifier.urihttps://hdl.handle.net/20.500.12428/26083
dc.identifier.wosWOS:001079737400004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectRefractive-Index
dc.subjectDielectric Film
dc.subjectSi Nanowire
dc.subjectSolar-Cells
dc.subjectSilicon
dc.subjectSns2
dc.subjectAbsorption
dc.subjectMos2
dc.titleNanowire geometry effects on devices and transport mechanisms: SnS2/SiNW heterojunction
dc.typeArticle

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