Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content

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dc.authoridSEL, Kivanc/0000-0002-4623-5206
dc.contributor.authorSel, Kivanc
dc.contributor.authorAkaoglu, Baris
dc.contributor.authorAtilgan, Ismail
dc.contributor.authorKatircioglu, Bayram
dc.date.accessioned2025-01-27T20:12:19Z
dc.date.available2025-01-27T20:12:19Z
dc.date.issued2011
dc.departmentÇanakkale Onsekiz Mart Üniversitesi
dc.description.abstractHydrogenated amorphous silicon carbide (a-SiCx:H) films of different carbon content (x) were deposited by radio frequency plasma enhanced chemical vapor deposition (PECVD) system. Apart from the X-ray photoelectron spectroscopy (XPS) and UV-Visible transmission analyses, the resistivity measurements between 293 K and 450 K were emphasized to assess the eventual transport mechanisms. The film resistivities are unexpectedly found relatively low, especially for high carbon content. In the frame of exclusive band conduction, the apparent thermal activation energies, evaluated from Arrhenius type plot remain too low compared to half values of the optical gaps. Numerical analyses were undertaken by extending conduction from the band conduction about the mobility edge inside the band gap by including the nearest neighbor hopping (NNH) conduction across the localized tail states. By successfully fitting the formulated conductivity expression to the experimental results, parameters such as tail states distributions, true activation energies to the mobility edge have been retrieved. (C) 2010 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipTurkish Scientific and Technical Research Council (TUBITAK-BDP); Middle East Technical University (METU-BAP)
dc.description.sponsorshipThis work was carried out with the financial support of Turkish Scientific and Technical Research Council (TUBITAK-BDP) and Middle East Technical University (METU-BAP).
dc.identifier.doi10.1016/j.sse.2010.12.010
dc.identifier.endpage8
dc.identifier.issn0038-1101
dc.identifier.issn1879-2405
dc.identifier.issue1
dc.identifier.startpage1
dc.identifier.urihttps://doi.org/10.1016/j.sse.2010.12.010
dc.identifier.urihttps://hdl.handle.net/20.500.12428/20908
dc.identifier.volume57
dc.identifier.wosWOS:000288419000001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofSolid-State Electronics
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccess
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20250125
dc.subjectAmorphous silicon carbide
dc.subjectMobility gap
dc.subjectDensity of states
dc.subjectConduction mechanism
dc.subjectNearest neighbor hopping conduction
dc.subjectActivation energy
dc.titleEffects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content
dc.typeArticle

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