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    Ruthenium(II) Complex Based Photodiode for Organic Electronic Applications
    (Springer, 2018) Tataroglu, A.; Ocaya, R.; Dere, A.; Dayan, O.; Serbetci, Z.; Al-Sehemi, Abdullah G.; Soylu, M.
    In this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current-voltage (I-V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (I broken vertical bar(b)), ideality factor (n) and series resistance (R (s)) of the photodiode were determined from the analysis of I-V characteristics. Moreover, the capacitance/conductance-voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications.
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    Öğe
    Single crystal ruthenium(II) complex dye based photodiode
    (Elsevier Sci Ltd, 2016) Tataroglu, A.; Dayan, O.; Ozdemir, N.; Serbetci, Z.; A-Ghamdi, Ahmed A.; Dere, A.; El-Tantawy, Farid
    The electrical and photoresponse properties of Ruthenium(II) complex dye based on photodiode were analyzed by current, capacitance and conductance measurements performed in a wide illumination intensity and frequency range. It was observed that the reverse current increases with increasing illumination intensity. The results confirm that the photodiode exhibits a photoconducting behavior. Also, the transient photocurrent, photocapacitance and photoconductance of the photodiode were investigated as a function of time. It was observed that the values of these parameters increase after illuminating and reach back to original value after turning off the illumination. In addition, the interface states and series resistance of the photodiode were determined from capacitance/conductance voltage measurements. The value of these parameters decreases with increasing frequency. The obtained experimental results suggest that the photodiode with Ruthenium/Ru(II) complex thin film could be used in various optoelectronic devices and applications. (C) 2016 Elsevier Ltd. All rights reserved.