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    A novel photodiode based on Ruthenium(II) complex containing polydentate pyridine as photocatalyst
    (Pergamon-Elsevier Science Ltd, 2015) Soylu, M.; Orak, I.; Dayan, O.; Serbetci, Z.
    Ruthenium(II)-complex thin film, bearing pyridine-based tridentate was deposited on p-Si substrate by spin coating technique. The I-V measurements across the junction showed rectifying behavior. The reverse bias current of the heterojunction diode increased with increasing illumination intensity. The sensitivity to the light of I-V characteristics was attributed to the photocatalytic effect of Ruthenium(II)-complex. Ruthenium(II)complex thin film exhibited a transparency higher than 70% in the visible part of the spectrum. The band gap of Ruthenium(II)-complex film was calculated to be 4.42 eV. The reflectance data can be analyzed to determine optical constants such as refractive index and dielectric constant. The results indicate that Ruthenium(II)complex can be used in fabrication of high photosensitive diodes. (C) 2015 Elsevier Ltd. All rights reserved.
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    Ruthenium(II) Complex Based Photodiode for Organic Electronic Applications
    (Springer, 2018) Tataroglu, A.; Ocaya, R.; Dere, A.; Dayan, O.; Serbetci, Z.; Al-Sehemi, Abdullah G.; Soylu, M.
    In this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current-voltage (I-V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (I broken vertical bar(b)), ideality factor (n) and series resistance (R (s)) of the photodiode were determined from the analysis of I-V characteristics. Moreover, the capacitance/conductance-voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications.