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    A novel photodiode based on Ruthenium(II) complex containing polydentate pyridine as photocatalyst
    (Pergamon-Elsevier Science Ltd, 2015) Soylu, M.; Orak, I.; Dayan, O.; Serbetci, Z.
    Ruthenium(II)-complex thin film, bearing pyridine-based tridentate was deposited on p-Si substrate by spin coating technique. The I-V measurements across the junction showed rectifying behavior. The reverse bias current of the heterojunction diode increased with increasing illumination intensity. The sensitivity to the light of I-V characteristics was attributed to the photocatalytic effect of Ruthenium(II)-complex. Ruthenium(II)complex thin film exhibited a transparency higher than 70% in the visible part of the spectrum. The band gap of Ruthenium(II)-complex film was calculated to be 4.42 eV. The reflectance data can be analyzed to determine optical constants such as refractive index and dielectric constant. The results indicate that Ruthenium(II)complex can be used in fabrication of high photosensitive diodes. (C) 2015 Elsevier Ltd. All rights reserved.
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    Heteroleptic neutral Ru(II) complexes based photodiodes
    (Elsevier Science Bv, 2017) Elgazzar, Elsayed; Dayan, O.; Serbetci, Z.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; El-Tantawy, Farid
    The two complexes Ru(II) containing 2,6-bis(benzimidazol-2-yl) pyridine and 2-pyridine and 2-quinoline carboxylates were synthesized to fabricate organic photodiodes. The electrical properties of Au/Ru(II) complex (I)/n - Si/Al and Au/Ru(II) complex (II)/n - Si/Al diodes were investigated by current-voltage and capacitance-voltage measurements. The fabricated devices give a high rectification behavior with rectification ratio of 2.4 x10(4) - 2.1 x10(3) at +/- 4 V. The diodes exhibited a high photoconductivity based on trap levels within band gap. The series resistance and barrier height were calculated from (C - V) measurements and compared to other of (I - V). The obtained results indicate that the prepared photodiodes can be used as photosensor for optoelectronic applications.
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    Photoelectrical characteristics of novel Ru(II) complexes based photodiode
    (Springer, 2019) Farooq, W. A.; Elgazzar, Elsayed; Dere, A.; Dayan, O.; Serbetci, Z.; Karabulut, Abdulkerim; Atif, M.
    The Ru(II) complex was prepared by the reaction of 4-chloro-N-[(E)-(pyridin-2-yl) methylidene] benzene-1-sulfonamide, [RuCl2(p-cymene)](2) and 2,2-(pyridine-2,6-diyl) bis(1H-benzimidazole) compounds by simple chemical technique. Al/ruthenium(II) complex/p-Si/Al was characterized by electronic devices and its electrical properties were studied as photodiode. In dark, the photodiode parameters such as potential barrier phi and ideality factor n were investigated from current-voltage (I-V) plot and confirmed by using Cheung-Cheung and Norde's models. Under illumination effect, the synthesized device shows high photosensitivity and the charge carriers increased based on the trapped state created under the conduction band. It was observed from conductance-voltage (G-V) and resistance-voltage (R-s-V) measurements that the series resistance Rs of the diode is decreased dramatically and its conductance G is increased by applied electric field.
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    Photoresponsivity and photodetectivity properties of copper complex-based photodiode
    (Elsevier, 2020) Dayan, Osman; Imer, Arife Gencer; Al-Sehemi, Abdullah G.; Ozdemir, Namik; Dere, A.; Serbetci, Z.; Al-Ghamdi, Ahmed A.
    Spin coated Cu(II) complex thin layer onto p-Si substrate was used in photodiode fabrication. The structural properties of novel synthesized Cu(II) complex were investigated using different techniques. The single crystal X-ray diffraction (sc-XRD) technique confirms the Cu(II) complex containing 2-mesityl1H-benzo[d]imidazole ligands and two chloride ligands have a highly distorted cis-square-planar geometry. The thermogravimetric analysis (TGA) shows that the Cu(II) complex is stable up to 248 degrees C. Also, the current-voltage measurements were performed to investigate the characteristic of photodiode based on copper complex in darkness and under solar simulator. The fundamental electrical parameters of fabricated diode were obtained using Thermionic theory and modified Norde function. The manufactured device exhibits a good response to light with the defined rise and fall time of 351 ms and 622 ms under 100 mWcm(-2) solar illumination, respectively. Furthermore, frequency dependent capacitance and conductance measurements were performed in dark and under illumination. The obtained results suggest that prepared photodiode based on Cu(II) complex could be used for organic light detection in different optoelectronic applications as photodetector, photocapacitor, and photoconductor. (C) 2019 Elsevier B.V. All rights reserved.
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    Ruthenium(II) Complex Based Photodiode for Organic Electronic Applications
    (Springer, 2018) Tataroglu, A.; Ocaya, R.; Dere, A.; Dayan, O.; Serbetci, Z.; Al-Sehemi, Abdullah G.; Soylu, M.
    In this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current-voltage (I-V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (I broken vertical bar(b)), ideality factor (n) and series resistance (R (s)) of the photodiode were determined from the analysis of I-V characteristics. Moreover, the capacitance/conductance-voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications.
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    Silicon based photodetector with Ru(II) complexes organic interlayer
    (Elsevier Sci Ltd, 2019) Karabulut, Abdulkerim; Dere, A.; Dayan, Osman; Al-Sehemi, Abdullah G.; Serbetci, Z.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
    In present work, the electrical properties and illumination effects were investigated for the silicon based photodetector with organic Ru(II) complexes interfacial layer. The current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements were analyzed to determine electrical and photoelectrical properties under dark and different solar light intensity conditions. The reverse bias current values under light conditions were higher than dark conditions, and this situation demonstrates that the fabricated device displays a photo conducting behavior. Besides, some crucial electrical parameters such as series resistance, barrier height and ideality factor values of prepared device were calculated by using current-voltage measurements. The ideality factor and barrier height values of fabricated device were calculated as 9.42 and 0.59 for dark condition. Besides to these experiments, transient photocurrent and photo-capacitance/conductance were also investigated under different light conditions. It was determined from transient measurements that the fabricated device has a high sensitivity to light. The photoresponse of the diode was determined to be around 4479 +/- 1.9 under 100 mW/cm(2 )illumination. The examined C/G-V characteristics of the fabricated device strongly depend on voltage and frequency. The analyzed results suggest that the fabricated Al/Ru(II) complexes/p-Si/Al device can be used in rapidly developing optoelectronic applications, especially for the organic materials-based photodetector technology.
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    Single crystal ruthenium(II) complex dye based photodiode
    (Elsevier Sci Ltd, 2016) Tataroglu, A.; Dayan, O.; Ozdemir, N.; Serbetci, Z.; A-Ghamdi, Ahmed A.; Dere, A.; El-Tantawy, Farid
    The electrical and photoresponse properties of Ruthenium(II) complex dye based on photodiode were analyzed by current, capacitance and conductance measurements performed in a wide illumination intensity and frequency range. It was observed that the reverse current increases with increasing illumination intensity. The results confirm that the photodiode exhibits a photoconducting behavior. Also, the transient photocurrent, photocapacitance and photoconductance of the photodiode were investigated as a function of time. It was observed that the values of these parameters increase after illuminating and reach back to original value after turning off the illumination. In addition, the interface states and series resistance of the photodiode were determined from capacitance/conductance voltage measurements. The value of these parameters decreases with increasing frequency. The obtained experimental results suggest that the photodiode with Ruthenium/Ru(II) complex thin film could be used in various optoelectronic devices and applications. (C) 2016 Elsevier Ltd. All rights reserved.