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    A new water-soluble naphthalene diimide as a highly selective fluorescent chemosensor for Cu(II) ion: Synthesis, DFT calculations, photophysical and electrochemical properties
    (Elsevier Science Sa, 2024) Abourajab, Arwa; Karsili, Pelin; Rashid, Rebwar; Dinleyici, Meltem; Pasaogullari, Nur; Altinisik, Sinem; Koyuncu, Sermet
    The highly selective, sensitive, and water-soluble fluorescent sensors are desideratum for optoelectronic, environmental, biological, and biomedical applications. An innovative fluorescence chemosensor, naphthalene diimide (3) with metal binding sites, was designed, synthesized and characterized. The chemosensor's optical, electrochemical, spectroelectrochemical, and morphological properties were investigated, and then the density functional theory (DFT) simulations were conducted. The selectivity of 3 for the metals Cu(II), Ag(I), Hg(II), Mg (II), Fe(III), Ca(II), Co(II), Zn(II), Pb(II) and Cd(II) were investigated through UV-visible and fluorescence spectroscopy techniques. 3 was highly selective and sensitive toward Cu(II) metal ions. The chemosensor can detect Cu(II) in water with a detection limit of 1.11 mu M, which is lower than the WHO standard and has good repeatability. Further investigations through the IR, DPV, AFM, UV-visible and fluorescence spectroscopies, SEM, EDX and TEM techniques confirmed the binding capabilities of the 3 with Cu(II).
  • [ X ]
    Öğe
    Aggregation-induced red-shift emission from self-assembled planar naphthalene diimide dye: Interlayer in a Schottky-type photodiode and DFT studies
    (Elsevier, 2024) Karsili, Pelin; Abourajab, Arwa; Dinleyici, Meltem; Altinisik, Sinem; Koyuncu, Sermet; Dolek, Gamze; Kus, Mahmut
    In this study, a planar, soluble, thin film-forming and self-assembled small naphthalene diimide (3) molecule with a subtle moiety at the imide-nitrogen was synthesized, and applied for the first time in literature as an interfacial layer between Al and p-Si layers in a Schottky-type photodiode. The morphology of the compound was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thin film structure and morphology affected the optical and electrical properties. The energy levels of the highest occupied molecular orbitals and lowest unoccupied molecular orbitals of 3 were calculated as -6.14 eV and -4.02 eV, corresponding to the band gap of 2.12 eV consistent with density functional theory (DFT) results. Differential scanning calorimetry (DSC) studies revealed a relatively high Tg value at 208 degrees C, indicating high-temperature applicability of the crystalline structure. The I-V measurements of Al/3/p-Si heterostructure were performed under dark and various light power intensities. The current steadily rose with each incremental 20 mW increase in light intensity. The reverse current increased almost 10-fold at 100 mW/cm2 illumination compared to dark measurement. The photodiode's responsivity, photosensitivity, and detectivity factors were elucidated. The photodiode's characteristic values, such as Io, n, phi b, and Rs, were obtained as 3.50 x 10-6 A, 8.24, 0.588 eV and 2.266 k Omega, respectively. The fabricated Schottky-type diode showed promising results for the optoelectronic field. The compound's perfect solubilities in a wide range of solvents, processability, excellent chemical and photochemical stabilities, and exciting optical, thermal and electrochemical properties make it an ideal candidate for thin film and molecular electronics applications.