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    Photoresponsivity and photodetectivity properties of copper complex-based photodiode
    (Elsevier, 2020) Dayan, Osman; Imer, Arife Gencer; Al-Sehemi, Abdullah G.; Ozdemir, Namik; Dere, A.; Serbetci, Z.; Al-Ghamdi, Ahmed A.
    Spin coated Cu(II) complex thin layer onto p-Si substrate was used in photodiode fabrication. The structural properties of novel synthesized Cu(II) complex were investigated using different techniques. The single crystal X-ray diffraction (sc-XRD) technique confirms the Cu(II) complex containing 2-mesityl1H-benzo[d]imidazole ligands and two chloride ligands have a highly distorted cis-square-planar geometry. The thermogravimetric analysis (TGA) shows that the Cu(II) complex is stable up to 248 degrees C. Also, the current-voltage measurements were performed to investigate the characteristic of photodiode based on copper complex in darkness and under solar simulator. The fundamental electrical parameters of fabricated diode were obtained using Thermionic theory and modified Norde function. The manufactured device exhibits a good response to light with the defined rise and fall time of 351 ms and 622 ms under 100 mWcm(-2) solar illumination, respectively. Furthermore, frequency dependent capacitance and conductance measurements were performed in dark and under illumination. The obtained results suggest that prepared photodiode based on Cu(II) complex could be used for organic light detection in different optoelectronic applications as photodetector, photocapacitor, and photoconductor. (C) 2019 Elsevier B.V. All rights reserved.
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    Photosensing properties of ruthenium(II) complex-based photodiode
    (Springer Heidelberg, 2019) Imer, Arife Gencer; Dere, Aysegul; Al-Sehemi, Abdullah G.; Dayan, Osman; Serbetci, Zafer; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin
    Ru(II) complex containing 2,6-di(1H-pyrazol-3-yl)pyridine ligand was synthesized to prepare organic-based photodiode. After forming the back contact with aluminum metal on p-Si by thermal evaporation, Al/Ru(II) complex/p-Si heterojunction was constructed by inserting Ru(II) complex organic layer into Si substrate. The fundamental electrical parameters and photosensing properties of fabricated heterojunction were investigated by current-voltage and capacitance-voltage measurements under the dark and different light intensities. The studied device exhibits a good rectifying property with rectification ratio of 2.4x10(4) at +/- 7V. It is observed that the photosensing properties such as light sensitivity and photoconductive responsivity of the photodiode based on Ru(II) complex are strongly dependent on the illumination power. The transient measurements show that the heterojunction device has a good photo switching property in the application of the photodiode, photoconductor and photocapacitor. The obtained results declare that the fabricated Ru(II)-based heterojunction device can be used in the organic-based optoelectronic device applications as a photodiode, photosensor, and optical sensor.