Yazar "Elgazzar, Elsayed" seçeneğine göre listele

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    Öğe
    Heteroleptic neutral Ru(II) complexes based photodiodes
    (Elsevier Science Bv, 2017) Elgazzar, Elsayed; Dayan, O.; Serbetci, Z.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; El-Tantawy, Farid
    The two complexes Ru(II) containing 2,6-bis(benzimidazol-2-yl) pyridine and 2-pyridine and 2-quinoline carboxylates were synthesized to fabricate organic photodiodes. The electrical properties of Au/Ru(II) complex (I)/n - Si/Al and Au/Ru(II) complex (II)/n - Si/Al diodes were investigated by current-voltage and capacitance-voltage measurements. The fabricated devices give a high rectification behavior with rectification ratio of 2.4 x10(4) - 2.1 x10(3) at +/- 4 V. The diodes exhibited a high photoconductivity based on trap levels within band gap. The series resistance and barrier height were calculated from (C - V) measurements and compared to other of (I - V). The obtained results indicate that the prepared photodiodes can be used as photosensor for optoelectronic applications.
  • [ X ]
    Öğe
    Photoelectrical characteristics of novel Ru(II) complexes based photodiode
    (Springer, 2019) Farooq, W. A.; Elgazzar, Elsayed; Dere, A.; Dayan, O.; Serbetci, Z.; Karabulut, Abdulkerim; Atif, M.
    The Ru(II) complex was prepared by the reaction of 4-chloro-N-[(E)-(pyridin-2-yl) methylidene] benzene-1-sulfonamide, [RuCl2(p-cymene)](2) and 2,2-(pyridine-2,6-diyl) bis(1H-benzimidazole) compounds by simple chemical technique. Al/ruthenium(II) complex/p-Si/Al was characterized by electronic devices and its electrical properties were studied as photodiode. In dark, the photodiode parameters such as potential barrier phi and ideality factor n were investigated from current-voltage (I-V) plot and confirmed by using Cheung-Cheung and Norde's models. Under illumination effect, the synthesized device shows high photosensitivity and the charge carriers increased based on the trapped state created under the conduction band. It was observed from conductance-voltage (G-V) and resistance-voltage (R-s-V) measurements that the series resistance Rs of the diode is decreased dramatically and its conductance G is increased by applied electric field.