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    Öğe
    A light-detecting Ru(II)/Si heterojunction system involving a binuclear Ru (II) complex with pyridine-2,6-diimine (pydim) ligand
    (Springer, 2024) Koc, Muemin Mehmet; Dayan, Osman; Dere, Aysegul; Cetinkaya, Bekir; Coskun, Burhan; Yakuphanoglu, Fahrettin
    A meticulously detailed chemical procedure was employed to synthesize the Ru (II)-containing pyridine-2,6-diimine (pydim) organometallic complex. The resulting complex was then applied to Al-coated Si wafers using the spin-coating technique, leading to the production of Al/Ru(II) organometallic complex/n-Si/Al photodiodes. The light responsiveness of these photodiodes was demonstrated through the acquisition of I-V and I-t characteristics. Subsequently, essential parameters such as ideality factor, photosensitivity, barrier height, and photoresponse values were evaluated based on the obtained I-V and I-t plots. The calculations yielded ideality factors and barrier heights, resulting in average values of 6.41 and 0.552 eV, respectively. Furthermore, an in-depth analysis of the electrical properties of the diodes was conducted using G-V and C-V assessments, revealing a strong dependence on AC signal frequency. This investigation underscored that the observed frequency-related electrical behaviour is rooted in series resistance and interface states.
  • [ X ]
    Öğe
    Photosensing properties of ruthenium(II) complex-based photodiode
    (Springer Heidelberg, 2019) Imer, Arife Gencer; Dere, Aysegul; Al-Sehemi, Abdullah G.; Dayan, Osman; Serbetci, Zafer; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin
    Ru(II) complex containing 2,6-di(1H-pyrazol-3-yl)pyridine ligand was synthesized to prepare organic-based photodiode. After forming the back contact with aluminum metal on p-Si by thermal evaporation, Al/Ru(II) complex/p-Si heterojunction was constructed by inserting Ru(II) complex organic layer into Si substrate. The fundamental electrical parameters and photosensing properties of fabricated heterojunction were investigated by current-voltage and capacitance-voltage measurements under the dark and different light intensities. The studied device exhibits a good rectifying property with rectification ratio of 2.4x10(4) at +/- 7V. It is observed that the photosensing properties such as light sensitivity and photoconductive responsivity of the photodiode based on Ru(II) complex are strongly dependent on the illumination power. The transient measurements show that the heterojunction device has a good photo switching property in the application of the photodiode, photoconductor and photocapacitor. The obtained results declare that the fabricated Ru(II)-based heterojunction device can be used in the organic-based optoelectronic device applications as a photodiode, photosensor, and optical sensor.
  • [ X ]
    Öğe
    The photodetection properties of a ruthenium electro-optic device for organic material-based device industry
    (Elsevier, 2023) Imer, Arife Gencer; Dere, Aysegul; Kaya, Esra; Al-Sehemi, Abdullah G.; Dayan, Osman; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
    The electrical properties and effect of illumination on the photodetection properties were investigated for the fabricated device with Ru(II)-pydim complex interface layer. The Ru(II)-pydim interface was deposited by spin coating technique on a p-silicon substrate. The electrical and optoelectrical parameters of photodiode were analyzed via the current-voltage (I-V), capacitance/conductance-voltage (C/G-V) measurements under dark and different illumination power. The fabricated device has good electrical parameters such as the rectification ratio of 2.726 x 104, the ideality factor of 1.328, and barrier height of 0.805 eV under the dark condition. The current values of the device with Ru(II)-pydim interface at reverse bias were strongly dependent on the illumination intensities, confirming its photoconduction behavior. The I-V measurements under different solar illuminations present that the electro-optic device with Ru(II)-pydim complex as an interface has good photodiode parameters with the responsivity of 131 mA/W, and the detectivity of 1.63 x 1011 Jones at 100 mW/cm2. The photo transient measurements demonstrate that the Ru(II)-pydim complex based photodiode presents the desired photo-switching property. Therefore, the prepared Ru(II)-pydim based device can be used for electro-optic and photonic applications, particularly in the rapidly developing organic material-based device industry.