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    Effects of Si nanowire on the device properties of n-ZnSe/p-Si heterostructure
    (Springer, 2019) Coskun, E.; Gullu, H. H.; Colakoglu, T.; Emir, C.; Bozdogan, E.; Parlak, M.
    The semiconductor nanowire (NW) technology has raised attention owing to its one-dimensional geometry as a solution for lattice mismatch in the fabricated heterostructures. Although, SiNWs have been investigated for various device technologies, there is no published work on the p-n junction formed by deposition of ZnSe thin film on these NW structures, in which this film layer has significant optical and electrical properties in optoelectronics applications. The aim of this study is determining the device properties of n-ZnSe/SiNW heterojunction and obtaining the enhancement in the device application of the NW structure on Si surface with comparing to planar surface. SiNW was produced by metal assisted etching method as a cost-efficient process, and the ZnSe film was deposited on SiNW and planar Si substrates by thermal evaporation of elemental sources. The optical band gap of the deposited ZnSe film was determined as 2.7eV which is in a good agreement with literature. The ideality factor and series resistance values of the ZnSe/SiNW and ZnSe/Si heterojunctions were calculated as 3.12, 461 , and 4.52, 7.26x103, respectively. As a result of utilizing SiNW structure, a spectacular improvement in terms of the physical parameters related to device properties was achieved.
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    Öğe
    Investigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique
    (Elsevier Science Bv, 2008) Colakoglu, T.; Parlak, M.; Ozder, S.
    The optical properties of the Ag-In-Se (AlS) thin films deposited by e-beam technique were investigated by means of the optical transmittance measurements. The optical absorption coefficients of the films were found to vary from 10(3) to 10(5) cm(-1) over the wavelength range of 300-1100 nm. The real and imaginary parts of the refractive index and dielectric constant for the as-grown and annealed films in between 100 and 400 degrees C were evaluated by means of both envelope method (EM) and continuous wavelet transform (CWT) method and the results were in quite good agreement with each other. The refractive index, n, dispersion over the measured wavelength range was explained by applying single-oscillator model (SOM) and the related parameters were calculated. The optical absorption process for the AIS thin films was characterized by three direct transitions from three closely spaced valence bands to a single conduction band due to the splitting of the valence band under the influence of the tetragonal crystalline field and spin-orbit interaction. The direct optical band gap energy decreases as the annealing temperature increases because of the increase in the width of band tail states near valence-band edge caused by the Se segregation. The two distinct parameters of the quasicubic model; crystal-field splitting Delta(CF), and spin-orbit splitting, Delta(SO), were calculated for as-grown and annealed AlS thin films. (C) 2008 Elsevier B.V. All rights reserved.