Yazar "Al-Ghamdi, Ahmed A." seçeneğine göre listele

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    Dye sensitized solar cell-based optoelectronic device using novel [Ru(L1)(L2)(NCS)2] complex
    (Elsevier B.V., 2021) Dayan, Osman; Gençer İmer, Arife; Tercan, Melek; Dere, Ayşegül; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, Fahrettin
    A dye sensitized solar cell-based photodiode was prepared using novel [Ru(L1)(L2)(NCS)2] complex for solar energy and optoelectronic applications. The new heteroleptic ruthenium(II) complex [Ru(L1)(L2)(NCS)2], was synthesized from the reaction of (pyridyl)benzimidazole ligands. The possible usage of [Ru(L1)(L2)(NCS)2] complex in dye synthesized solar cell-based photodiode was investigated using electrical and capacitance characteristics. The device was irradiated under various solar light intensities. The change in photocurrent of the device confirms the photoconducting behavior of prepared device. The device exhibited both the photocapacitance and photoresponse behavior with solar illumination. The obtained optoelectrical results suggest that the studied photodiode with [Ru(L1)(L2)(NCS)2] complex could be used in optoelectronic device for optical switching and controlling applications.
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    Heteroleptic neutral Ru(II) complexes based photodiodes
    (Elsevier Science Bv, 2017) Elgazzar, Elsayed; Dayan, O.; Serbetci, Z.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; El-Tantawy, Farid
    The two complexes Ru(II) containing 2,6-bis(benzimidazol-2-yl) pyridine and 2-pyridine and 2-quinoline carboxylates were synthesized to fabricate organic photodiodes. The electrical properties of Au/Ru(II) complex (I)/n - Si/Al and Au/Ru(II) complex (II)/n - Si/Al diodes were investigated by current-voltage and capacitance-voltage measurements. The fabricated devices give a high rectification behavior with rectification ratio of 2.4 x10(4) - 2.1 x10(3) at +/- 4 V. The diodes exhibited a high photoconductivity based on trap levels within band gap. The series resistance and barrier height were calculated from (C - V) measurements and compared to other of (I - V). The obtained results indicate that the prepared photodiodes can be used as photosensor for optoelectronic applications.
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    Photoresponsivity and photodetectivity properties of copper complex-based photodiode
    (Elsevier, 2020) Dayan, Osman; Imer, Arife Gencer; Al-Sehemi, Abdullah G.; Ozdemir, Namik; Dere, A.; Serbetci, Z.; Al-Ghamdi, Ahmed A.
    Spin coated Cu(II) complex thin layer onto p-Si substrate was used in photodiode fabrication. The structural properties of novel synthesized Cu(II) complex were investigated using different techniques. The single crystal X-ray diffraction (sc-XRD) technique confirms the Cu(II) complex containing 2-mesityl1H-benzo[d]imidazole ligands and two chloride ligands have a highly distorted cis-square-planar geometry. The thermogravimetric analysis (TGA) shows that the Cu(II) complex is stable up to 248 degrees C. Also, the current-voltage measurements were performed to investigate the characteristic of photodiode based on copper complex in darkness and under solar simulator. The fundamental electrical parameters of fabricated diode were obtained using Thermionic theory and modified Norde function. The manufactured device exhibits a good response to light with the defined rise and fall time of 351 ms and 622 ms under 100 mWcm(-2) solar illumination, respectively. Furthermore, frequency dependent capacitance and conductance measurements were performed in dark and under illumination. The obtained results suggest that prepared photodiode based on Cu(II) complex could be used for organic light detection in different optoelectronic applications as photodetector, photocapacitor, and photoconductor. (C) 2019 Elsevier B.V. All rights reserved.
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    Photosensing properties of ruthenium(II) complex-based photodiode
    (Springer Heidelberg, 2019) Imer, Arife Gencer; Dere, Aysegul; Al-Sehemi, Abdullah G.; Dayan, Osman; Serbetci, Zafer; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin
    Ru(II) complex containing 2,6-di(1H-pyrazol-3-yl)pyridine ligand was synthesized to prepare organic-based photodiode. After forming the back contact with aluminum metal on p-Si by thermal evaporation, Al/Ru(II) complex/p-Si heterojunction was constructed by inserting Ru(II) complex organic layer into Si substrate. The fundamental electrical parameters and photosensing properties of fabricated heterojunction were investigated by current-voltage and capacitance-voltage measurements under the dark and different light intensities. The studied device exhibits a good rectifying property with rectification ratio of 2.4x10(4) at +/- 7V. It is observed that the photosensing properties such as light sensitivity and photoconductive responsivity of the photodiode based on Ru(II) complex are strongly dependent on the illumination power. The transient measurements show that the heterojunction device has a good photo switching property in the application of the photodiode, photoconductor and photocapacitor. The obtained results declare that the fabricated Ru(II)-based heterojunction device can be used in the organic-based optoelectronic device applications as a photodiode, photosensor, and optical sensor.
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    Silicon based photodetector with Ru(II) complexes organic interlayer
    (Elsevier Sci Ltd, 2019) Karabulut, Abdulkerim; Dere, A.; Dayan, Osman; Al-Sehemi, Abdullah G.; Serbetci, Z.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
    In present work, the electrical properties and illumination effects were investigated for the silicon based photodetector with organic Ru(II) complexes interfacial layer. The current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements were analyzed to determine electrical and photoelectrical properties under dark and different solar light intensity conditions. The reverse bias current values under light conditions were higher than dark conditions, and this situation demonstrates that the fabricated device displays a photo conducting behavior. Besides, some crucial electrical parameters such as series resistance, barrier height and ideality factor values of prepared device were calculated by using current-voltage measurements. The ideality factor and barrier height values of fabricated device were calculated as 9.42 and 0.59 for dark condition. Besides to these experiments, transient photocurrent and photo-capacitance/conductance were also investigated under different light conditions. It was determined from transient measurements that the fabricated device has a high sensitivity to light. The photoresponse of the diode was determined to be around 4479 +/- 1.9 under 100 mW/cm(2 )illumination. The examined C/G-V characteristics of the fabricated device strongly depend on voltage and frequency. The analyzed results suggest that the fabricated Al/Ru(II) complexes/p-Si/Al device can be used in rapidly developing optoelectronic applications, especially for the organic materials-based photodetector technology.
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    The photodetection properties of a ruthenium electro-optic device for organic material-based device industry
    (Elsevier, 2023) Imer, Arife Gencer; Dere, Aysegul; Kaya, Esra; Al-Sehemi, Abdullah G.; Dayan, Osman; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
    The electrical properties and effect of illumination on the photodetection properties were investigated for the fabricated device with Ru(II)-pydim complex interface layer. The Ru(II)-pydim interface was deposited by spin coating technique on a p-silicon substrate. The electrical and optoelectrical parameters of photodiode were analyzed via the current-voltage (I-V), capacitance/conductance-voltage (C/G-V) measurements under dark and different illumination power. The fabricated device has good electrical parameters such as the rectification ratio of 2.726 x 104, the ideality factor of 1.328, and barrier height of 0.805 eV under the dark condition. The current values of the device with Ru(II)-pydim interface at reverse bias were strongly dependent on the illumination intensities, confirming its photoconduction behavior. The I-V measurements under different solar illuminations present that the electro-optic device with Ru(II)-pydim complex as an interface has good photodiode parameters with the responsivity of 131 mA/W, and the detectivity of 1.63 x 1011 Jones at 100 mW/cm2. The photo transient measurements demonstrate that the Ru(II)-pydim complex based photodiode presents the desired photo-switching property. Therefore, the prepared Ru(II)-pydim based device can be used for electro-optic and photonic applications, particularly in the rapidly developing organic material-based device industry.