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dc.contributor.authorBayındır, Sinan
dc.contributor.authorYiğit, Evin
dc.contributor.authorAkman, Feride
dc.contributor.authorSevgili, Ömer
dc.contributor.authorOrak, İkram
dc.contributor.authorDayan, Osman
dc.date.accessioned2023-10-30T06:01:03Z
dc.date.available2023-10-30T06:01:03Z
dc.date.issued2023en_US
dc.identifier.citationBayındır, S., Yiğit, E., Akman, F., Sevgili, Ö., Orak, İ., & Dayan, O. (2023). The electrical and photophysical performances of axially-substituted naphthalene diimide-based small molecules as interface layer. Materials Science and Engineering: B, 294, 116510. https://doi.org/10.1016/j.mseb.2023.116510en_US
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2023.116510
dc.identifier.uri0921-5107 / 1873-4944
dc.identifier.urihttps://hdl.handle.net/20.500.12428/4572
dc.description.abstractTo date, the number of publications on NDI-based small molecules is almost identical to the number of publications on NDI-based polymers. As opposed to the polymer examples, the design of NDI-based small molecules can be easily sub-categorized into axial (a) and core (c) substituted geometries, and have a practical use. For this purpose, in this study, initially, the symmetric and asymmetric axially-substituted-NDI-based small organic ligands (aNDIs 1A-1G) were synthesized as novel interface layers, and the values of atomic charges, geometry, dipole moment, and thermodynamical properties were calculated with DFT methods. Thus, initially, the theoric and experimental band gap values were calculated with DFT/TD-DFT and UV–Vis measurements, respectively. The theoretical band gap was found to be between 3.5 eV and 3.6 eV and the experimental band gap was found to be between 3.15 eV and 3.17 eV. Following synthesis and theoretical studies, the electrical and photophysical performances of naphthalene diimide-appended diode and photodiode devices (D1-D7) have been discussed with an analytical overview. For this, initially, the aNDIs, organic photodiodes, were fabricated with a thermal evaporation system, and the surface morphologies were examined with AFM for each interface layer. Due to the very small roughness values, about 1.8–2.1 nm, it was concluded that the thermal evaporation method is a suitable method for growing these structures. Following the fabrication of devices, the diode and photodiode parameters were investigated with current–voltage measurements at dark and different illumination conditions. The temperature-dependent performances of the fabricated devices were investigated at 100 K, 200 K, and 320 K. Additionally, the capacitance characteristics were investigated with the impedance spectroscopy method. As a result of all these studies, in addition to the literature for effective synthesis of symmetric and asymmetric aNDIs as simple structured photodiode candidates, besides the effective synthetic touches, the wide-range behavioral differences of these photodiode candidates of different natures have been investigated comparatively.en_US
dc.language.isoengen_US
dc.publisherElsevier Ltden_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDFT/TD-DFTen_US
dc.subjectMetal–organic-semiconductoren_US
dc.subjectNaphthalenediimide (NDI)en_US
dc.subjectOrganic-based photodiodeen_US
dc.subjectPhotovoltaic performancesen_US
dc.subjectThermal evaporationen_US
dc.titleThe electrical and photophysical performances of axially-substituted naphthalene diimide-based small molecules as interface layeren_US
dc.typearticleen_US
dc.authorid0000-0002-0764-1965en_US
dc.relation.ispartofMaterials Science and Engineering: Ben_US
dc.departmentFakülteler, Fen Fakültesi, Kimya Bölümüen_US
dc.identifier.volume294en_US
dc.institutionauthorDayan, Osman
dc.identifier.doi10.1016/j.mseb.2023.116510en_US
dc.relation.ecinfo:eu-repo/grantAgreement/TUBITAK/SOBAG/120F092
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorwosidH-4339-2013en_US
dc.authorscopusid13805114500en_US
dc.identifier.wosqualityQ2en_US
dc.identifier.wosWOS:001007397400001en_US
dc.identifier.scopus2-s2.0-85153111993en_US


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