Tataroglu, A.Ocaya, R.Dere, A.Dayan, O.Serbetci, Z.Al-Sehemi, Abdullah G.Soylu, M.2025-01-272025-01-2720180361-52351543-186Xhttps://doi.org/10.1007/s11664-017-5882-1https://hdl.handle.net/20.500.12428/26400In this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current-voltage (I-V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (I broken vertical bar(b)), ideality factor (n) and series resistance (R (s)) of the photodiode were determined from the analysis of I-V characteristics. Moreover, the capacitance/conductance-voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications.eninfo:eu-repo/semantics/closedAccessTransition-metal complexruthenium/Ru(II)illumination effectsArticle47182883310.1007/s11664-017-5882-1Q3WOS:0004185808000982-s2.0-85032009804Q2