Gunes, IbrahimSarica, EmrahBilgin, VildanKucukarslan, AyseOzder, Serhat2025-01-272025-01-2720242352-4928https://doi.org/10.1016/j.mtcomm.2024.111094https://hdl.handle.net/20.500.12428/26698In this study, undoped tin oxide (SnO2) and fluorine (F)-doped SnO2 (FTO) films at various doping levels were deposited on glass substrates using the ultrasonic spray pyrolysis technique, followed by an annealing process applied to the films after deposition. In line with this, the study reveals the significant impact of the fluorine doping level optimization on certain physical properties such as the structural, optical, and electrical characteristics of the obtained films, and presents the consequences of the variation in these physical properties for adaptability in various optoelectronic applications. No diffraction peaks were observed in the X-ray diffraction patterns of the deposited films. After the annealing process, however, films with a polycrystalline form and a rutile tetragonal crystal structure were obtained. It was observed that the crystallization levels were better in films doped with 5 % and 10 % F. The optical band gap values of the films were determined to vary between 3.35 eV and 3.68 eV. Furthermore, it was found that with the increase in F doping level, the resistivity (ranging from 2.1 Omega cm to 43.5 Omega cm) and sheet resistance (ranging from 1.62x10(5) Omega/sq to 35.9x10(5) Omega/sq) values of the films decreased, while the figure of merit values (ranging from 0.12x10(-8) Omega(-1) to 67.1x10(-8) Omega(-1)) increased. Among all FTO films, it was revealed that films doped with 10 % F exhibited the highest optical transmittance, the lowest electrical resistivity, and the highest figure of merit values.eninfo:eu-repo/semantics/closedAccessSnO2 :F filmsUltrasonic spray pyrolysisAnnealingoptimization of F doping ratioPhysical propertiesArticle4110.1016/j.mtcomm.2024.111094N/AWOS:0013681539000012-s2.0-85209889927Q2