Emir, CansuTataroglu, AdemCoskun, EmreOcak, Sema Bilge2025-01-272025-01-2720242470-1343https://doi.org/10.1021/acsomega.3c06600https://hdl.handle.net/20.500.12428/20689This study presents a comprehensive investigation of the optical and structural characteristics of the indium selenide (InSe) film prepared on a glass substrate. The structural characteristics of the InSe film were analyzed using characterization techniques including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy while the UV-vis spectrophotometry method was used in the spectral range between 500 and 1000 nm to examine the optical characteristics. Thus, the UV-vis spectroscopic data were used to extract several optical parameters including extinction coefficient (k), optical band gap (E-g), refractive index (n), absorption coefficient (alpha), and optical conductivity (sigma(opt)). The optical transition of InSe was found as a direct transition. However, the optical analysis of this study has revealed that the InSe film has the potential to be used in various optoelectronic and photovoltaic applications.eninfo:eu-repo/semantics/openAccessAbsorptionStructural and Optical Properties of Interfacial InSe Thin FilmArticle977588759610.1021/acsomega.3c06600N/AWOS:0011646167000012-s2.0-8518533201638405465Q1